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SUD19N20-90
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
2.5
V GS = 10 V
I D = 5 A
100
2.0
T J = 150 °C
1.5
10
1.0
T J = 25 °C
0.5
0.0
- 50
- 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
T J - J u nction Temperat u re ( °C )
On-Resistance vs. Junction Temperature
THERMAL RATINGS
25
100
V SD - So u rce-to-Drain V oltage ( V )
Source-Drain Diode Forward Voltage
20
Limited b y R DS(on) *
10 μ s
100 μ s
10
15
1 ms
10
1
10 ms
5
T C = 25 °C
Single P u lse
100 ms
1 s, DC
0
0
25
50 75 100 125
150
175
0.1
0 . 1
1
1 0
100
1 0 0 0
2
1
0.1
T C - Case Temperat u re (°C)
Maximum Avalanche Drain Current
vs. Case Temperature
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
V DS - Drain-to-Source Voltage (V)
* V GS > minimum V GS at which R DS(on) is specified
Safe Operating Area
0.01
10- 4
10- 3
10- 2
10- 1
1
10
30
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71767 .
www.vishay.com
4
Document Number: 71767
S10-2245-Rev. E, 04-Oct-10
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